School of Engineering Department of Electronic and Computer Engineering 158 Automated Test Equipment for Magnetic Memory and Sensors Supervisor: SHAO Qiming / ECE Student: TONG Zihan / ELEC Course: UROP1100, Fall For the past decades, research has been showing that magnetic random-access memory (MRAM) based on emerging materials is promising for applications with high requirements for data storage and access due to its prominently high access speed, low power consumption and almost infinite endurance, etc. The storage element of such a novel memory device is magnetic tunnel junction (MTJ). To perform further circuit design and device development based on MRAM, a compact model of MTJ is supposed to be developed and optimised. During the project period, the development of emerging memory devices and designs of MTJ are reviewed. A reproduction of the compact model design for voltage-gated spin-orbit torque magnetic tunnel junction (SOT-MTJ) is conducted. Various simulations based on the model constructed are also performed and discussed. Automated Test Equipment for Magnetic Memory and Sensors Supervisor: SHAO Qiming / ECE Student: GUO Jiarong / ELEC Course: UROP1100, Spring The memristor, as the fourth electrical fundamental element, has great prospects on brain-like system and new generation of computer’s CPU. Thus, testing for some basic properties of material that build on 10 nm gold base electrode, and test Hall Effect of this chip. This project is related to design a system for testing memristor. During the experiment, by using different thickness of chiral 2D Perovskitesfor Hall measurement, the testing result of chiral perovskites has great electronic properties and compare to systemmeasurements. Designing a system for testing the chips efficiently is still on progress. So, the report is mainly focus on the process of testing the chips. Automated Test Equipment for Magnetic Memory and Sensors Supervisor: SHAO Qiming / ECE Student: TONG Zihan / ELEC Course: UROP2100, Spring Recent theories and experiments have been demonstrating that besides the binary-like non-volatile magnetization switching, perpendicular magnetic tunnel junctions (MTJs) based on spin-orbit torque switching may also show analogue-like behaviours, making them one of the possible candidates for solidstate artificial synapses and neurons, which are the fundamental building blocks of the next-generation hardware of neuromorphic computing. This project aims at developing a compact model for the multidomain MTJ devices based on the Preisach model of hysteresis, which treats the ferromagnetic material as the combination of parallel and independent hysterons with respective switching thresholds, and thus addressing their properties of multiple intermediate states and the issue of thermal stability.